This HP® H6Y75ET compatible 4GB DDR3-1600MHz Dual Rank Unbuffered 1.35V 204-pin CL11 SODIMM is 100% guaranteed to be compatible with your system and to work right the first time. Adding additional memory is the best way to increase the performance of your system. All our memory is built to strict JEDEC standards to meet or exceed the Tier 1 OEM's factory requirements. Our products are also guaranteed by federal law to not affect or void OEM warranties.
- Enables efficient and smooth execution of all your heavy-duty applications with maximum productivity
- Up to 1600 MHz speed with CL11 latency for smooth computer performance
- 4 GB memory allows you to have more programs open at a time
- 204-pin-pin DDR3 SDRAM interface synchronizes electrical and clock signals for an efficient data transfer rate
- 1 x 4GB modules for enhanced memory reliability and productivity
- 204-pin for optimal performance and maximum reliability
- CL11 CAS latency for reliable, fast response and improved performance
- SoDIMM form factor with 204-pin and 4 GB memory size effectively lessens the electrical load on the memory controller to allow maximum feasibility
- Unbuffered signal processing for dependable programmability of the processor for easy optimization of digital signals
